FQI4N90

FQB4N90 / FQI4N90

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FQB4N90 / FQI4N90

October 2001

QFET
FQB4N90 / FQI4N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
4.2A, 900V, RDS(on) 3.3 VGS 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G S

"
" "

D2-PAK
FQB Series

G D S

I2-PAK
FQI Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQB4N90 / FQI4N90 900 4.2 2.65 16.8 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C)

570 4.2 14 4.0 3.13 140 1.12 -55 to 150 300

TJ, Tstg TL

Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 0.89 40 62.5 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation

Rev. B, October 2001