FQI7N60

FQB7N60 / FQI7N60

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FQB7N60 / FQI7N60

April 2000

QFET
FQB7N60 / FQI7N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
7.4A, 600V, RDS(on) 1.0 VGS 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability

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D2-PAK
FQB Series

G D S

I2-PAK
FQI Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQB7N60 / FQI7N60 600 7.4 4.7 29.6 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C) Power Dissipation (TC 25 C)

580 7.4 14.2 4.5 3.13 142 1.14 -55 to 150 300

TJ, TSTG TL

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 0.88 40 62.5 Units CW CW CW

When mounted on the minimum pad size recommended (PCB Mount)

2000 Fairchild Semiconductor International

Rev. A, April 2000