FQL40N50F

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FQL40N50F

September 2001

FRFET
FQL40N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology.

Features
40A, 500V, RDS(on) 0.11 VGS 10 V Low gate charge ( typical 155 nC) Low Crss ( typical 95 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns )

"
" "

TO-264
G D S
FQL Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQL40N50F 500 40 25 160 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

1800 40 46 20 460 3.7 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.1 -Max 0.27 -30 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A2, September 2001