FQN1N60C

FQN1N60C 600V N-Channel MOSFET

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FQN1N60C 600V N-Channel MOSFET

QFET
FQN1N60C
600V N-Channel MOSFET
Features
0.3 A, 600 V, RDS(on) 11.5 VGS 10 V Low gate charge ( typical 4.8 nC ) Low Crss ( typical 3.5 pF) Fast switching 100 % avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-92
GDS
SSN Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain Current Drain Current

Parameter
Drain-Source Voltage - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

FQN1N60C
600 0.3 0.18 1.2 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units
V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C) Power Dissipation (TL 25 C) - Derate above 25 C

33 0.3 0.3 4.5 1 3 0.02 -55 to 150 300

TJ, TSTG TL

Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol
RJL RJA

Parameter
Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient
(Note 6a) (Note 6b)

Typ
---

Max
50 140

Units
C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQN1N60C Rev. A