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FQNL2N50B

By datasheet - April 3rd, 2008

FQNL2N50B

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FQNL2N50B

March 2001

QFET
FQNL2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

TM

Features
0.35A, 500V, RDS(on) 5.3 VGS 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching Improved dv/dt capability

D

"

G

"
" "

TO-92L
FQNL Series

GDS

S

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQNL2N50B 500 0.35 0.22 1.4 30
(Note 1) (Note 1) (Note 2)

Units V A A A V A mJ V/ns W W/ C C C

Gate-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

0.35 0.15 4.5 1.5 0.012 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 83 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. A, March 2001

FQNL2N50B Datasheet Fairchild Download PDF

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