FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

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FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

QFET
FQP11N40C/FQPF11N40C
400V N-Channel MOSFET
Features
10.5 A, 400V, RDS(on) Low Crss ( typical 85pF) Fast switching 100% avalanche tested Improved dv/dt capability 0.5 VGS 10 V Low gate charge ( typical 28 nC)

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

D

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

S

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

Parameter

FQP11N40C
10.5 6.6 42

FQPF11N40C
400 10.5 6.6 42 30 360 11 13.5 4.5

Units
V A A A V mJ A mJ V/ns

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
(Note 2) (Note 1) (Note 1) (Note 3)

135 1.07 -55 to 150 300

44 0.35

W W/ C C C

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC RCS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FQP11N40C
0.93 0.5 62.5

FQPF11N40C
2.86 -62.5

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FQP11N40C/FQPF11N40C Rev. C

FQP11N40C Datasheet Fairchild Download PDF

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FQP11N40C DATASHEET