FQP11N50CF

FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET

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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET

July 2005

FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
11A, 500V, RDS(on) 0.55 VGS 10 V Low Gate Charge (typical 43 nC) Low Crss (typical 20pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability Fast Recovery Body Diode (typical 90ns)

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) - Pulsed
(Note 1)

Parameter

FQP11N50CF FQPF11N50CF
500 11 7 44 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units
V A A A V mJ A mJ V/ns

11 7 44 670 11 19.5 4.5

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

195 1.56 -55 to 150 300

48 0.39

W W/ C C C

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC RJS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FQP11N50CF
0.64 0.5 62.5

FQPF11N50CF
2.58 -62.5

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQP11N50CF/FQPF11N50CF Rev. A