FQP13N50

FQP13N50/FQPF13N50

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FQP13N50/FQPF13N50

QFET
FQP13N50/FQPF13N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features
12.5A, 500V, RDS(on) 0.43 VGS 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQP13N50 500 12.5 7.9 50 30
(Note 2) (Note 1) (Note 1) (Note 3)

FQPF13N50 12.5 7.9 50 810 12.5 17 4.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

170 1.35 -55 to 150 300

56 0.45

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink FQP13N50 0.74 0.5 FQPF13N50 2.23 -Units C/W C/W

2002 Fairchild Semiconductor Corporation

Rev. B, September 2002