FQP15P12

FQP15P12/FQPF15P12

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FQP15P12/FQPF15P12

QFET
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
-15A, -120V, RDS(on) 0.2 VGS -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 110 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175 C maximum junction temperature rating

G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQP15P12 -120 -15 -10.6 -60 30
(Note 2) (Note 1) (Note 1) (Note 3)

FQPF15P12 -15 -10.6 -60 1157 -15 10 -5.0

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

100 0.67 -55 to 175 300

41 0.27

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP15P12 1.5 40 62.5 FQPF15P12 3.66 -62.5 Units C/W C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, December 2003