FQPF2P25

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FQPF2P25

April 2000

QFET
FQPF2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

Features
-1.8A, -250V, RDS(on) 4.0 VGS -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQPF2P25 -250 -1.8 -1.14 -7.2 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

120 -1.8 3.2 -5.5 32 0.26 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 3.9 62.5 Units CW CW

2000 Fairchild Semiconductor International

Rev. A, April 2000