FQPF32N12V2

FQP32N12V2/FQPF32N12V2

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FQP32N12V2/FQPF32N12V2

QFET
FQP32N12V2/FQPF32N12V2
120V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.

Features
32 A, 120V, RDS(on) 0.05 VGS 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQP32N12V2 120 32 23 128

FQPF32N12V2 32 23 128 30 439 32 15 4.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

150 1 -55 to 175 300

50 0.33

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP32N12V2 1.0 40 62.5 FQPF32N12V2 3.0 -62.5 Units C/W C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, December 2003