FQPF3N50C

FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

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FQP3N50C/FQPF3N50C 500V N-Channel MOSFET

QFET
FQP3N50C/FQPF3N50C
500V N-Channel MOSFET
Features
3 A, 500 V, RDS(on) 2.5 VGS 10 V Low gate charge ( typical 10 nC ) Low Crss ( typical 8.5 pF) Fast switching 100 % avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol
VDSS ID Drain Current

Parameter
Drain-Source Voltage - Continuous (TC 25 C) - Continuous (TC 100 C)

FQP3N50C
500 3 1.8
(Note 1)

FQPF3N50C
3 1.8 12 30 200 3 6.2 4.5

Units
V A A A V mJ A mJ V/ns W W/ C C C

IDM VGSS EAS IAR EAR dv/dt PD

Drain Current

- Pulsed

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C
(Note 2) (Note 1) (Note 1) (Note 3)

62 0.5 -55 to 150 300

25 0.2

TJ, TSTG TL

Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol
RJC RJS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FQP3N50C
2.0 0.5 62.5

FQPF3N50C
4.9 -62.5

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com