FQPF3N80C

FQP3N80C/FQPF3N80C

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FQP3N80C/FQPF3N80C

QFET
FQP3N80C/FQPF3N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
3.0A, 800V, RDS(on) 4.8 VGS 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQP3N80C 800 3 1.9 12

FQPF3N80C 3 1.9 12 30 320 3 10.7 4.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

107 0.85 -55 to 150 300

39 0.31

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP3N80C 1.17 0.5 62.5 FQPF3N80C 3.2 -62.5 Units C/W C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, April 2003