FQPF3P20

QFET P-CHANNEL

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QFET P-CHANNEL

FQPF3P20

FEATURES
BVDSS -200V Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 2.06 (Typ.)
1 2 3

RDS(ON) 2.7 ID -2.2A

TO-220F

1. Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds y x x z x Value -200 -2.2 -1.39 -8.8 30 150 -2.2 3.2 -5.5 32 0.26 -55 to 150 C 300 Units V A A V mJ A mJ V/ns W W/ C

THERMAL RESISTANCE
Symbol RJC RJA Characteristics Junction-to-Case Junction-to-Ambient Typ. - - Max. 3.9 62.5 Units C/W

REV. B

1
1999 Fairchild Semiconductor Corporation