FQPF5N50CF

FQPF5N50CF 500V N-Channel MOSFET

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FQPF5N50CF 500V N-Channel MOSFET

FRFET
FQPF5N50CF
500V N-Channel MOSFET
Features
5A, 500V, RDS(on) 1.55 VGS 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

G GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC 25 C) - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

Parameter

FQPF5N50CF
500 5 2.9 20 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units
V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

300 5 7.3 4.5 38 0.3 -55 to 150 300

Thermal Characteristics
Symbol
RJC RJS RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FQPF5N50CF
3.31 -62.5

Units
C/W C/W C/W

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FQPF5N50CF Rev. B