FQPF8N90C

FQP8N90C/FQPF8N90C

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FQP8N90C/FQPF8N90C

QFET
FQP8N90C/FQPF8N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
6.3A, 900V, RDS(on) 1.9 VGS 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

FQP8N90C 900 6.3 3.8 25

FQPF8N90C 6.3 3.8 25 30 850 6.3 17.1 4.0

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

171 1.37 -55 to 150 300

60 0.48

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP8N90C 0.73 0.5 62.5 FQPF8N90C 2.08 -62.5 Units C/W C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, November 2003