FQT13N06

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FQT13N06

January 2002

QFET
FQT13N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.

TM

Features
2.8A, 60V, RDS(on) 0.14 VGS 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching Improved dv/dt capability

D

D
"

S G

G

"
" "

SOT-223
FQT Series

S

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 70 C) Drain Current - Pulsed
(Note 1)

FQT13N06 60 2.8 2.24 11.2 25
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

85 2.8 0.21 7.0 2.1 0.017 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 60 Units C/W

When mounted on the minimum pad size recommended (PCB Mount)

2002 Fairchild Semiconductor Corporation

Rev. A2, January 2002

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FQT13N06 DATASHEET