FQT4N20L
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FQT4N20L
May 2001
QFET
FQT4N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
TM
Features
0.85A, 200V, RDS(on) 1.35 VGS 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logic drivers
D
D
"
S G
G
"
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SOT-223
FQT Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC 25 C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 70 C) Drain Current - Pulsed
(Note 1)
FQT4N20L 200 0.85 0.68 3.4 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/ C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)
52 0.85 0.22 5.5 2.2 0.018 -55 to 150 300
- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 57 Units C/W
When mounted on the minimum pad size recommended (PCB Mount)
2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
FQT4N20L Datasheet Fairchild Download PDF
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