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FQT7N10L

By datasheet - April 3rd, 2008

FQT7N10L

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FQT7N10L

May 2001

QFET
FQT7N10L
100V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

TM

Features
1.7A, 100V, RDS(on) 0.35 VGS 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching Improved dv/dt capability Low level gate drive requirments allowing direct operationfrom logic drives

D

D
"

S G

G

"
" "

SOT-223
FQT Series

S

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 70 C) Drain Current - Pulsed
(Note 1)

FQT7N10L 100 1.7 1.36 6.8 20
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

50 1.7 0.2 6.0 2.0 0.016 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 62.5 Units C/W

When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation

Rev. A, May 2001

FQT7N10L Datasheet Fairchild Download PDF

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