FSB619

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FSB619

Discrete Power Signal Technologies July 1998

FSB619
C

E B

SuperSOT -3 (SOT-23)

NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

Absolute Maximum Ratings
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

FSB619 50 50 5 2 -55 to 150

Units V V V A C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol

TA 25 C unless otherwise noted

Max Characteristic FSB619 PD RJA Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient 500 4 250 mW mW/ C C/W Units

1998 Fairchild Semiconductor Corporation

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