FSB6726

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FSB6726

FSB6726
PNP General Purpose Amplifier
This device designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from process 77.
3

2 1 SuperSOTTM-3 1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 30 40 5 1.5 -55 150 Units V V V A C

These rating are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 C 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) VBE(on) Ccb hfe Parameter IC 10mA IC 100 A IE 100 A VCB 40V VEB 5V IC 100mA, VCE 1V IC 1A, VCE 1V IC 1A, IB 100mA IC 1A, VCE 1V VCB 10V, f 1MHz IC 50mA, VCE 10V, f 20MHz 2.5 60 50 Test Conditions Min. 30 40 5 100 100 Max. Units V V V nA nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Capacitance Small Signal current Gain

On Characteristics 250 500 1.2 30 25 mV V pF

Small Signal Characteristics

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Thermal Characteristics
Symbol PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient Parameter Max. 500 250 Units C C

2003 Fairchild Semiconductor Corporation

Rev. A2, September 2003

FSB6726 Datasheet Fairchild Download PDF

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FSB6726 DATASHEET