FSBCW30

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FSBCW30

Discrete POWER Signal Technologies

FSBCW30
C

E B

SuperSOTTM-3

PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics.

Absolute Maximum Ratings
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

Parameter
Collector-Emitter Voltage

Value
32 32 5.0 500 -55 to 150

Units
V V V mA C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA 25 C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Ambient
2

Max
FSBCW30 500 4 250

Units
mW mW/ C C/W

Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in

of 2oz copper.

1998 Fairchild Semiconductor Corporation

FSBCW30, Rev B

FSBCW30 Datasheet Fairchild Download PDF

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FSBCW30 DATASHEET