FYA3010DN

FYA3010DN Schottky Barrier Rectifier

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FYA3010DN Schottky Barrier Rectifier

July 2005

FYA3010DN
Schottky Barrier Rectifier
Features
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection

Applications
Switched mode power supply Freewheeling diodes

TO-3P
1 2 3
Marking: Y3010DN
(per diode) Ta 25 C unless otherwise noted

1. Anode 2.Cathode 3. Anode

Absolute Maximum Ratings
Symbol VRRM VR IF(AV) IFSM TJ, TSTG

Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current TC 135 C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature
25 C unless otherwise noted

Value 100 100 30 250 - 65 to 150

Units V V A A C

Thermal Characteristics T
Symbol RJC RJC RJC

Parameter Maximum Thermal Resistance, Junction to Case (per diode) Maximum Thermal Resistance, Junction to Case (per PKG) Maximum Thermal Resistance, Case to Heatsink
(per diode) Ta 25 C unless otherwise noted

Value 0.78 0.48 0.2

Units C/W C/W C/W

Electrical Characteristics
Symbol VFM

Parameter Maximum Instantaneous Forward Voltage IF 15A IF 15A IF 30A IF 30A Maximum Instantaneous Reverse Current rated VR TC 25 C TC 125 C TC 25 C TC 125 C TC 25 C TC 125 C

Value 0.85 0.67 1.05(Typ.) 0.80 1 20

Units V

IRM

Pulse Test: Pulse Width 300 s, Duty Cycle 2%

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FYA3010DN Rev. A