FYP1010DN
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FYP1010DN
June 2007
FYP1010DN
Schottky Barrier Rectifier
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection
Applications
Switched mode power supply Freewheeling diodes
1.Anode 3.Anode 1
2. Cathode
TO220 (None Jedec type)
Absolute Maximum Ratings
Symbol
VRRM VR IF(AV) IFSM TJ, TSTG
TC 25 C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current TC 135 C
Value
100 100 10 100 -65 to 150
Units
V V A A C
Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature
Thermal Characteristics
Symbol
RJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
2.5
Units
C/W
Electrical Characteristics (per diode)
Symbol
VFM
Parameter
Maximum Instantaneous Forward Voltage IF 5A IF 5A IF 10A IF 10A Maximum Instantaneous Reverse Current rated VR TC 25 C TC 125 C TC 25 C TC 125 C TC 25 C TC 125 C
Value
0.75 0.65 0.95 0.73 1 30
Units
V
IRM
mA
Pulse Test: Pulse Width 300s, Duty Cycle 2%
2007 Fairchild Semiconductor Corporation
1
FYP1010DN Rev. C
FYP1010DN Datasheet Fairchild Download PDF
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