FYP1010DN

FYP1010DN

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FYP1010DN

June 2007

FYP1010DN
Schottky Barrier Rectifier
Low forward voltage drop High frequency properties and switching speed Guard ring for over-voltage protection

Applications
Switched mode power supply Freewheeling diodes

1.Anode 3.Anode 1

2. Cathode

TO220 (None Jedec type)

Absolute Maximum Ratings
Symbol
VRRM VR IF(AV) IFSM TJ, TSTG

TC 25 C unless otherwise noted

Parameter
Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current TC 135 C

Value
100 100 10 100 -65 to 150

Units
V V A A C

Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature

Thermal Characteristics
Symbol
RJC

Parameter
Maximum Thermal Resistance, Junction to Case (per diode)

Value
2.5

Units
C/W

Electrical Characteristics (per diode)
Symbol
VFM

Parameter
Maximum Instantaneous Forward Voltage IF 5A IF 5A IF 10A IF 10A Maximum Instantaneous Reverse Current rated VR TC 25 C TC 125 C TC 25 C TC 125 C TC 25 C TC 125 C

Value
0.75 0.65 0.95 0.73 1 30

Units
V

IRM

mA

Pulse Test: Pulse Width 300s, Duty Cycle 2%

2007 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FYP1010DN Rev. C

FYP1010DN Datasheet Fairchild Download PDF

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