FZT749

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FZT749

Discrete Power Signal Technologies July 1998

FZT749
C E

SOT-223

PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.

Absolute Maximum Ratings
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA 25 C unless otherwise noted

FZT749 25 35 5 3 -55 to 150

Units V V V A C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol

TA 25 C unless otherwise noted

Max Characteristic FZT749 PD RJA Total Device Dissipation Thermal Resistance, Junction to Ambient 2 62.5 W C/W Units

1998 Fairchild Semiconductor Corporation

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