H11AG2

PHOTOTRANSISTOR OPTOCOUPLERS

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PHOTOTRANSISTOR OPTOCOUPLERS

H11AG1 DESCRIPTION
The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.

H11AG2

H11AG3

6 1

6
SCHEMATIC

FEATURES
High efficiency low degradation liquid epitaxial IRED Logic level compatible, input and output currents, with CMOS and LS/TTL High DC current transfer ratio at low input currents Underwriters Laboratory (UL) recognized File E90700

1
ANODE 1 6 BASE

6 1

CATHODE 2

5 COL

APPLICATIONS
CMOS driven solid state reliability Telephone ring detector Digital logic isolation

N/C 3

4 EMITTER

ABSOLUTE MAXIMUM RATINGS
Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation 25 C (LED plus detector) Derate Linearly From 25 C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation 25 C Ambient Derate Linearly From 25 C DETECTOR Detector Power Dissipation 25 C Derate Linearly from 25 C Continuous Collector Current PD All All 150 2.0 50 mW mW/ C mA Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Device All All All All All All All All Value -55 to 150 -55 to 100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 Units C C C mW mW/ C mA V A mW mW/ C

2001 Fairchild Semiconductor Corporation DS300213 1/28/02

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