H11D4

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

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HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

H11D1 H11D2 H11D3 H11D4 4N38

FEATURES
High Voltage - H11D1, H11D2, BVCER 300 V - H11D3, H11D4, BVCER 200 V High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute Underwriters Laboratory (UL) recognized File E90700

ANODE 1

6 BASE

APPLICATIONS
Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls

CATHODE 2

5 COLLECTOR

N/C 3

4 EMITTER

ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA 25 C Derate above 25 C EMITTER Forward DC Current Reverse Input Voltage Forward Current - Peak (1 s pulse, 300pps) LED Power Dissipation TA 25 C Derate above 25 C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to 150 -55 to 100 260 for 10 sec 260 3.5 80 6.0 3.0 150 1.41 Units C C C mW mW/ C mA V A mW mW/ C

8/9/00

200046A