H11F1

PHOTO FET OPTOCOUPLERS

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

PHOTO FET OPTOCOUPLERS

H11F1 H11F2 H11F3
PACKAGE SCHEMATIC

ANODE 1

OUTPUT TERM.

6 1

6
CATHODE 2 5

1
3 4 OUTPUT TERM.

6 1

DESCRIPTION
The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

FEATURES
As a remote variable resistor 100 to 300 M 99.9% linearity 15 pF shunt capacitance 100 G I/O isolation resistance As an analog switch Extremely low offset voltage 60 Vpk-pk signal capability No charge injection or latch-up ton, toff 15 S UL recognized (File E90700) VDE recognized (File E94766) Ordering option 300 (e.g. H11F1.300)

APPLICATIONS
As a variable resistor Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion

2003 Fairchild Semiconductor Corporation

Page 1 of 10

3/19/03