H11G1

HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS

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HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

H11G1 H11G2 H11G3

FEATURES
High BVCEO - Minimum 100 V for H11G1 - Minimum 80 V for H11G2 - Minimum 55 V for H11G3 High sensitivity to low input current Minimum 500 percent CTR at IF 1 mA Low leakage current at elevated temperature (maximum 100 A at 80 C) Underwriters Laboratory (UL) recognized File E90700

APPLICATIONS
CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer
ANODE 1 6 BASE

CATHODE 2

5 COLLECTOR

N/C 3

4 EMITTER

NOTE All dimensions are in inches (millimeters)

ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation TA 25 C Derate above 25 C Input-Output Isolation Voltage EMITTER Forward Input Current Reverse Input Voltage Forward Current - Peak (1 s pulse, 300pps) LED Power Dissipation TA 25 C Derate above 25 C DETECTOR Collector-Emitter Voltage H11G1 H11G2 H11G3 Detector Power Dissipation TA 25 C Derate above 25 C Symbol TSTG TOPR TSOL PD VISO IF VR IF(pk) PD Value -55 to 150 -55 to 100 260 for 10 sec 260 3.5 5300 60 6.0 3.0 100 1.8 Units C C C mW mW/ C Vac(rms) mA V A mW mW/ C

VCEO

100 80 55 200 2.67

mW mW/ C

7/21/00

200045A