HGT1N30N60A4D

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HGT1N30N60A4D
Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.

Features
100kHz Operation At 390V, 20A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ 125oC Low Conduction Loss

Symbol
C

Ordering Information
PART NUMBER HGT1N30N60A4D PACKAGE SOT-227 BRAND 30N60A4D

Packaging
JEDEC STYLE SOT-227B
GATE EMITTER

NOTE: When ordering, use the entire part number.

TAB (ISOLATED)

COLLECTOR

EMITTER

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGT1N30N60A4D Rev. B