HGT1S14N36G3VLS

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS

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HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
December 2001

14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)

Features
Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ 175 C Ignition Energy Capable
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Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.
PACKAGING AVAILABILITY PART NUMBER HGTP14N36G3VL HGT1S14N36G3VL HGT1S14N36G3VLS PACKAGE TO-220AB TO-262AA TO-263AB BRAND 14N36GVL 14N36GVL 14N36GVL
COLLECTOR (FLANGE)

JEDEC TO-262AA
EMITTER COLLECTOR GATE

JEDEC TO-263AB
COLLECTOR (FLANGE) GATE EMITTER

Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S14N36G3VLS9A.

The development type number for this device is TA49021.
R1 GATE R2

EMITTER

Absolute Maximum Ratings

TC 25oC, Unless Otherwise Specified HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS 390 24 18 14 10 17 12 332 100 0.67 -40 to 175 260 6

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous at VGE 5V, TC 25oC. . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE 5V, TC 100oC . . . . . . . . . . . . . . . . . . . . . . IC100 Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L 2.3mH, TC 25oC . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L 2.3mH, TC 175oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L 2.3mH, T C 25oC. . . . . . . . . . . . . . . EAS Power Dissipation Total at TC 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . O
perating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA.
2001 Fairchild Semiconductor Corporation

UNITS V V A A V A A mJ W W/oC o C o C KV

HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS Rev. B