HGT1S20N35G3VLS

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS

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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
November 2003

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)

Features
Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection TJ 175oC Ignition Energy Capable

Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
PACKAGING AVAILABILITY PART NUMBER HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-220AB T0-262AA T0-263AB BRAND 20N35GVL 20N35GVL 20N35GVL
COLLECTOR (FLANGE)

JEDEC TO-262AA
EMITTER COLLECTOR GATE

JEDEC TO-263AB
COLLECTOR (FLANGE) GATE EMITTER

Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A.

The development type number for this device is TA49076.
R1 GATE R2

EMITTER

Absolute Maximum Ratings

TC 25oC, Unless Otherwise Specified HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS 375 24 20 20 10 21 16 500 150 1.0 -40 to 175 260 6

Collector-Emitter Bkdn Voltage At 10mA, RGE 1k. . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS Collector Current Continuous At VGE 5.0V, TC 25oC, Figure 7 . . . . . . . . . . . . . IC25 At VGE 5.0V, TC 100oC . . . . . . . . . . . . . . . . . . . .IC100 Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Inductive Switching Current At L 2.3mH, TC 25o C . . . . . . . . . . . . . . . . . . . . . . ISCIS At L 2.3mH, TC 150oC . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy At L 2.3mH, TC 25oC . . . . . . . . . . . . . . EAS Power Dissipation Total At TC 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage J
unction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Electrostatic Voltage at 100pF, 1500 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD NOTE: May be exceeded if IGEM is limited to 10mA.
2003 Fairchild Semiconductor Corporation

UNITS V V A A V A A mJ W W/oC o C o C KV

HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. C