HGT1S20N60A4S9A

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

HGT1S20N60A4S9A

Data Sheet March 2006

600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339.

Features
100kHz Operation at 390V, 20A 200kHz Operation at 390V, 12A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ 125oC Low Conduction Loss Temperature Compensating SABERTM Model www.intersil.com Related Literature - TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

Ordering Information
PART NUMBER HGT1S20N60A4S9A PACKAGE TO-263AB BRAND 20N60A4

Packaging
JEDEC TO-263AB

COLLECTOR (FLANGE)

NOTE: When ordering, use the entire part number.

G C E

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2006 Fairchild Semiconductor Corporation

HGT1S20N60A4S9A Rev. A