HGTD3N60C3S9A

HGTD3N60C3S, HGTP3N60C3

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HGTD3N60C3S, HGTP3N60C3
Data Sheet December 2001

6A, 600V, UFS Series N-Channel IGBTs
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49113.

Features
6A, 600V at TC 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . 130ns at TJ 150oC Short Circuit Rating Low Conduction Loss Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Packaging
JEDEC TO-252AA
COLLECTOR (FLANGE)

Ordering Information
PART NUMBER HGTD3N60C3S HGTP3N60C3 PACKAGE TO-252AA TO-220AB BRAND G3N60C G3N60C
G E

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in Tape and Reel, i.e., HGTD3N60C3S9A.

JEDEC TO-220AB
E C

Symbol
C COLLECTOR (FLANGE) G

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTD3N60C3S, HGTP3N60C3 Rev. B