HGTD7N60C3S

HGTD7N60C3S, HGTP7N60C3

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HGTD7N60C3S, HGTP7N60C3
Data Sheet December 2001

14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49115.

Features
14A, 600V at TC 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . 140ns at TJ 150oC Short Circuit Rating Low Conduction Loss

Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE

Ordering Information
PART NUMBER HGTD7N60C3S HGTP7N60C3 PACKAGE TO-252AA TO-220AB BRAND G7N60C

COLLECTOR (FLANGE)

JEDEC TO-252AA G7N60C3
GATE EMITTER COLLECTOR (FLANGE)

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A.

Symbol
C

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTD7N60C3S, HGTP7N60C3 Rev. B