HGTG12N60B3

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HGTG12N60B3
Data Sheet August 2003

27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171.

Features
27A, 600V, TC 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ 150oC Short Circuit Rating Low Conduction Loss

Packaging
JEDEC STYLE TO-247

E C G

Ordering Information
PART NUMBER HGTG12N60B3 PACKAGE TO-247 BRAND G12N60B3

NOTE: When ordering, use the entire part number.

Symbol
C

COLLECTOR (BOTTOM SIDE METAL)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2003 Fairchild Semiconductor Corporation

HGTG12N60B3 Rev. C1