HGTG18N120BND

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HGTG18N120BND
Data Sheet March 2007

54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49304.

Features
54A, 1200V, TC 25oC 1200V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ 150oC Short Circuit Rating Low Conduction Loss

Packaging
JEDEC STYLE TO-247
E C G

Ordering Information
PART NUMBER HGTG18N120BND PACKAGE TO-247 BRAND 18N120BND

COLLECTOR (FLANGE)

NOTE: When ordering, use the entire part number.

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2007 Fairchild Semiconductor Corporation

HGTG18N120BND Rev.C