HGTG20N60B3D

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HGTG20N60B3D
Data Sheet December 2001

40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016.

Features
40A, 600V at TC 25oC Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC Short Circuit Rated Low Conduction Loss Hyperfast Anti-Parallel Diode

Packaging
JEDEC STYLE TO-247
E C G

Ordering Information
PART NUMBER HGTG20N60B3D PACKAGE TO-247 BRAND G20N60B3D
COLLECTOR (BOTTOM SIDE METAL)

NOTE: When ordering, use the entire part number.

Symbol
C

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTG20N60B3D Rev. B