HGTP12N60C3

HGTP12N60C3, HGT1S12N60C3S

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HGTP12N60C3, HGT1S12N60C3S
Data Sheet December 2001

24A, 600V, UFS Series N-Channel IGBTs
The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49123.

Features
24A, 600V at TC 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ 150oC Short Circuit Rating Low Conduction Loss

Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)

Ordering Information
PART NUMBER HGTP12N60C3 HGT1S12N60C3S PACKAGE TO-220AB TO-263AB BRAND P12N60C3 S12N60C3 JEDEC TO-263AB

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A.
GATE

Symbol
C

COLLECTOR (FLANGE)

EMITTER

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGTP12N60C3, HGT1S12N60C3S Rev. B