HGTP3N60A4D

HGT1S3N60A4DS, HGTP3N60A4D

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HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet December 2001

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329.

Features
100kHz Operation At 390V, 3A 200kHz Operation At 390V, 2.5A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at TJ 125oC Low Conduction Loss Temperature Compensating SABERTM Model www.Fairchildsemi.com

Packaging
JEDEC TO-263AB

G E

COLLECTOR (FLANGE)

Ordering Information
PART NUMBER HGT1S3N60A4DS HGTP3N60A4D PACKAGE TO-263AB TO-220AB BRAND 3N60A4D 3N60A4D
E C G

JEDEC TO-220AB

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.

Symbol
C COLLECTOR (FLANGE)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2001 Fairchild Semiconductor Corporation

HGT1S3N60A4DS, HGTP3N60A4D Rev. B