HGTP7N60A4

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4
Data Sheet September 2004

600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331.

Features
100kHz Operation at 390V, 7A 200kHz Operation at 390V, 5A 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ 125oC Low Conduction Loss

Ordering Information
PART NUMBER HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 PACKAGE TO-263AB TO-247 TO-220AB BRAND G7N60A4 G7N60A4 G7N60A4

Symbol
C

NOTE: When ordering, use the entire part number.

Packaging
JEDEC STYLE TO-247
E C G

JEDEC TO-220AB

E C G COLLECTOR (FLANGE) COLLECTOR (BOTTOM SIDE METAL)

JEDEC TO-263AB

G E

COLLECTOR (FLANGE)

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767

2004 Fairchild Semiconductor Corporation

HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2