HUF75309D3S

HUF75309P3, HUF75309D3, HUF75309D3S

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HUF75309P3, HUF75309D3, HUF75309D3S
Data Sheet December 2001

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75309.

Features
19A, 55V Simulation Models - Temperature Compensated PSPICE and SABERTM Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Symbol
D

Ordering Information
PART NUMBER HUF75309P3 HUF75309D3 HUF75309D3S PACKAGE TO-220AB TO-251AA TO-252AA BRAND 75309P 75309D 75309D
S G

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75309D3ST.

Packaging
JEDEC STYLE TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE)

JEDEC TO-251AA
SOURCE DRAIN GATE

JEDEC TO-252AA
DRAIN (FLANGE)

GATE SOURCE

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUF75309P3, HUF75309D3, HUF75309D3S Rev. B