HUF75329D3S

HUF75329D3, HUF75329D3S

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HUF75329D3, HUF75329D3S
Data Sheet December 2001

20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.

Features
20A, 55V Simulation Models - Temperature Compensated PSPICE and SABERTM Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Symbol
D

Ordering Information
PART NUMBER HUF75329D3 HUF75329D3S PACKAGE TO-251AA TO-252AA BRAND 75329D 75329D
S G

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.

Packaging
JEDEC TO-251AA JEDEC TO-252AA

DRAIN (FLANGE)

SOURCE DRAIN GATE

GATE SOURCE

DRAIN (FLANGE)

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUF75329D3, HUF75329D3S Rev. B