HUF75339G3

HUF75339G3, HUF75339P3, HUF75339S3S

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HUF75339G3, HUF75339P3, HUF75339S3S
Data Sheet December 2001

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75339.

Features
75A, 55V Simulation Models - Temperature Compensated PSPICE and SABERTM Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Symbol
D

Ordering Information
PART NUMBER HUF75339G3 HUF75339P3 HUF75339S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75339G 75339P 75339S
S G

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75339S3ST.

Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (FLANGE)

JEDEC TO-220AB
SOURCE DRAIN GATE

DRAIN (TAB)

JEDEC TO-263AB

GATE SOURCE

DRAIN (FLANGE)

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUF75339G3, HUF75339P3, HUF75339S3S Rev. B