HUF75545P3

HUF75545P3, HUF75545S3, HUF75545S3S

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HUF75545P3, HUF75545S3, HUF75545S3S
Data Sheet September 2002

75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)

JEDEC TO-263AB
DRAIN (FLANGE)

Features
Ultra Low On-Resistance - rDS(ON) 0.010, VGS 10V Simulation Models - Temperature Compensated PSPICE and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve

HUF75545P3

HUF75545S3S

JEDEC TO-262AA
SOURCE DRAIN DRAIN (FLANGE) GATE

HUF75545S3

Ordering Information
PART NUMBER PACKAGE TO-220AB TO-262AA TO-263AB BRAND 75545P 75545S 75545S HUF75545P3

Symbol
D

HUF75545S3 HUF75545S3S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
S

Absolute Maximum Ratings

TC 25oC, Unless Otherwise Specified HUF75545P3, HUF75545S3, HUF75545S3S 80 80 20 75 73 Figure 4 Figure 6 270 1.8 -55 to 175 300 260 UNITS V V V A A

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC 25oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 100oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate A
bove 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ 25oC to 150oC.

W W/oC oC
oC oC

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2002 Fairchild Semiconductor Corporation HUF75545P3 / HUF75545S3 / HUF75545S3S Rev. C