HUF75631S3S

HUF75631P3, HUF75631S3ST

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HUF75631P3, HUF75631S3ST
Data Sheet December 2001

33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)

JEDEC TO-263AB
DRAIN (FLANGE)

Features
Ultra Low On-Resistance - rDS(ON) 0.040, VGS 10V Simulation Models - Temperature Compensated PSPICE and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve

HUF75631P3

HUF75631S3ST

Symbol
D

Ordering Information
PART NUMBER HUF75631P3
G

PACKAGE TO-220AB TO-263AB

BRAND 75631P 75631S

HUF75631S3ST
S

NOTE: When ordering, use the entire part number, e.g., HUF75631S3ST. TC 25oC, Unless Otherwise Specified HUF75631P3 HUF75631S3ST UNITS V V V A A

Absolute Maximum Ratings

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC 25oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 100oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Ab
ove 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ 25oC to 150oC.

100 100 20 33 23 Figure 4 Figures 6, 14, 15 120 0.80 -55 to 175 300 260

W W/oC
oC oC oC

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUF75631P3, HUF75631S3ST Rev. B