HUF75939P3

HUF75939P3, HUF75939S3ST

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HUF75939P3, HUF75939S3ST
Data Sheet December 2001

22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)

Features
JEDEC TO-263AB
DRAIN (FLANGE)

Ultra Low On-Resistance rDS(ON) 0.125, VGS 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models www.fairchildsemi.com

HUF75939P3

HUF75939S3ST

Peak Current vs Pulse Width Curve UIS Rating Curve

Symbol
D

Ordering Information
PART NUMBER HUF75939P3 PACKAGE TO-220AB TO-263AB BRAND 75939P 75939S

HUF75939S3ST
S

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings

TC 25oC, Unless Otherwise Specified HUF75939P3, HUF75939S3ST UNITS V V V A A 200 200 20 22 16 Figure 4 Figures 6, 14, 15 180 1.2 -55 to 175 300 260 W W/oC
oC oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC 25oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 100oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE:

1. TJ 25oC to 150oC. CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

2001 Fairchild Semiconductor Corporation

HUF75939P3, HUF75939S3ST Rev. B