HUF76609D3S

HUF76609D3, HUF76609D3S

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HUF76609D3, HUF76609D3S
Data Sheet December 2001

10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-251AA
DRAIN (FLANGE)

JEDEC TO-252AA
DRAIN (FLANGE)

Features
Ultra Low On-Resistance - rDS(ON) 0.160, VGS 10V - rDS(ON) 0.165, VGS 5V Simulation Models - Temperature Compensated PSPICE and SABERTM Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve

SOURCE DRAIN GATE GATE SOURCE

HUF76609D3

HUF76609D3S

Symbol
D

Switching Time vs RGS Curves

Ordering Information
PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76609D 76609D HUF76609D3

HUF76609D3S

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76609D3ST.

Absolute Maximum Ratings

TC 25oC, Unless Otherwise Specified HUF76609D3, HUF76609D3S UNITS V V V A A A A 100 100 16 10 10 7 7 Figure 4 Figures 6, 17, 18 49 0.327 -55 to 175 300 260 W W/oC
oC oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC 25oC, VGS 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 25oC, VGS 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 100oC, VGS 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC 100oC, VGS 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Ratin
g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ 25oC to 150oC.

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUF76609D3, HUF76609D3S Rev. B