HUFA75307T3ST

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HUFA75307T3ST
Data Sheet December 2001

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.

Features
2.6A, 55V Ultra Low On-Resistance, rDS(ON) 0.090 Diode Exhibits Both High Speed and Soft Recovery Temperature Compensating PSPICE Model Thermal Impedance SPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Symbol
D

Ordering Information
PART NUMBER HUFA75307T3ST PACKAGE SOT-223 5307
S

BRAND

NOTE: HUFA75307T3ST is available only in tape and reel.

Packaging
SOT-223
DRAIN (FLANGE)

GATE DRAIN SOURCE

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUFA75307T3ST Rev. B