HUFA75321D3S

HUFA75321D3, HUFA75321D3S

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HUFA75321D3, HUFA75321D3S
Data Sheet December 2001

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.

Features
20A, 55V Simulation Models - Temperature Compensating PSPICE and SABERTM Models - Thermal Impedance SPICE and SABER Models Available on the web at: www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Symbol
D

Ordering Information
PART NUMBER HUFA75321D3 HUFA75321D3S PACKAGE TO-251AA TO-252AA BRAND 75321D
S G

75321D

NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-251AA variant in tape and reel, e.g., HUFA75321D3ST.

Packaging
JEDEC TO-251AA JEDEC TO-252AA

SOURCE DRAIN GATE GATE DRAIN (FLANGE) SOURCE

DRAIN (FLANGE)

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

2001 Fairchild Semiconductor Corporation

HUFA75321D3, HUFA75321D3S Rev. B